Dependence of electric properties of a nanogap junction on electrode material

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1806-1812

  Furuta, Shigeo ^a   Takahashi, Tsuyoshi ^a   Naitoh, Yasuhisa ^b   Horikawa, Masayo ^b   Shimizu, Tetsuo ^b   Ono, Masatoshi ^a  

^a Funai Electric Advanced Applied Technology Research Institute Inc   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Au; Nanogap; Nanostructure; Oblique deposition; Resistance switching

Indexed keywords

CORRELATION METHODS; ELECTRIC PROPERTIES; ELECTROCHEMICAL ELECTRODES; ELECTRODES; ELECTROLYSIS; NEGATIVE RESISTANCE; PALLADIUM; PLATINUM; SILICON COMPOUNDS; SMELTING; STEELMAKING; TANTALUM; THERMOCHEMISTRY; VACUUM;

AU; ELECTRODE MATERIALS; ELECTRODE METALS; IN VACUUMS; METAL ELECTRODES; NANOGAP; OBLIQUE DEPOSITION; OBLIQUE DEPOSITIONS; RESISTANCE SWITCHING; SWEEPING VOLTAGES; TEMPERATURE RISES;

MELTING POINT;

EID: 54249155700     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1806     Document Type: Article

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