EUV simulation extension study for mask shadowing effect and its correction.

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Kang, Hoyoung ^a   Hansen, Steve ^b   Van Schoot, Jan ^a   Van Ingen Schenau, Koen ^a  

^a ASML   (Netherlands)

^b ASML US Inc   (United States)

Author keywords

EUV; Lithography; Shadow; Simulation

Indexed keywords

APPROXIMATE METHODS; ELECTROMAGNETIC INTERACTIONS; EM SIMULATIONS; EUV; INCIDENT LIGHT; KIRCHOFF APPROXIMATION; MASK ABSORBER; MASK GEOMETRY; MASK PATTERNS; PATTERN ORIENTATION; PATTERN SHIFTS; PROXIMITY CORRECTION; RIGOROUS SIMULATION; SHADOW; SHADOWING EFFECTS; SIMULATION; SIMULATION STUDIES; WAVELENGTH OF LIGHT;

APPROXIMATION THEORY; EXTREME ULTRAVIOLET LITHOGRAPHY;

MASKS;

EID: 79959340556     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772487     Document Type: Conference Paper

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