Effect of mask pattern correction for off-axis incident light in extreme ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3053-3058

  Sugawara, Minoru ^a   Nishiyama, Iwao ^a   Takai, Mikio ^b  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ENERGY DISSIPATION; ERROR ANALYSIS; IMAGE ANALYSIS; MASKS; PHOTOLITHOGRAPHY; REFRACTIVE INDEX;

BUFFER FILMS; CRITICAL DIMENSIONS (CD); MASK ERROR ENHANCEMENT; NUMERICAL APERTURE;

LIGHT;

EID: 13244279845     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1809616     Document Type: Conference Paper

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