Threshold voltage and mobility extraction by ultrafast switching measurement on NBTI

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 2027-2031

  Hu, Y Z ^a   Ang, D S ^a   Teo, Z Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Bias temperature instability; Columbic scattering; pulsed current voltage; vertical field induced mobility reduction

Indexed keywords

BIAS TEMPERATURE INSTABILITY; FIELD INDUCED; FUNCTION METHODS; GATE VOLTAGES; LINEAR DRAIN CURRENT; MEASUREMENT TIME; MOBILITY DEGRADATION; MOBILITY EXTRACTION; PMOSFET; PULSED CURRENTS; ULTRAFAST SWITCHING; VOLTAGE RANGES;

DRAIN CURRENT; MOSFET DEVICES; THRESHOLD VOLTAGE;

HOLE MOBILITY;

EID: 77955146184     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2050962     Document Type: Article

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