Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 123-127

  Chen, Jeng Hung ^a   Feng, Zhe Chuan ^a   Tsai, Hung Ling ^a   Yang, Jer Ren ^a   Li, P ^b   Wetzel, C ^b   Detchprohm, T ^b   Nelson, J ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Uniroyal   (United States)

Author keywords

HR TEM, high resolution transmission electron microscopy; HR XRD, high resolution X ray diffraction; MOCVD, metalorganic chemical vapor deposition; MQW, multiple quantum well; PLE, photoluminescence excitation

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HR-XRD, HIGH-RESOLUTION X-RAY DIFFRACTION; HRTEM, HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MQW, MULTIPLE QUANTUM WELLS; PLE, PHOTOLUMINESCENCE EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 30944444345     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.241     Document Type: Conference Paper

References (30)

1. S. Nakamura, S. Pearton, and G. Fasol The Blue Laser Diode-The Complete Story 2000 Springer Berlin
2. J.I. Pankove, T.D. Moustakas ed., Gallium Nitride (GaN) I and II, Semiconductors and Semimetals, ed. R.K.Willardson and E.R. Weber, Vol. 50 and 58, Academic, San Diego, 1998 and 1999.
3. H. Morkoc Nitride Semiconductors and Devices 1999 Springer Berlin
4. S. Nakamura S.G. Chichibu Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes 2000 Taylor and Francis London
5. E.T. Yu, M.O. Manasreh ed., III-V Nitride Semiconductors: Applications and Devices, Vol. 16 in M.O. Manasreh ed., Optoelectronic Properties of Semiconductors and Superlattices, Taylor and Francis, New York, 2003.
6. M.O. Manasreh, I.T. Ferguson ed., III-V Nitride Semiconductors: Growth, Vol. 19 in M.O. Manasreh ed., Optoelectronic Properties of Semiconductors and Superlattices, New York, Taylor and Francis, 2003.
7. Zhe Chuan Feng, ed., GaN-Based Materials: Growth and Characterization, Imperial College Press, London, in press.
8. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho Appl. Phys. Lett. 72 1998 2014
9. J.J. Song, and W. Shan B. Gil Gallium Nitride and Related Semiconductors 1998 Michael Faraday House 596
10. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Nukai, T., Appl. Phys. Lett., 68 (1996) 3286;
11. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Nukai, T., Appl. Phys. Lett., 69 (1996) 1477;
12. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Nukai, T., Appl. Phys. Lett., 69 (1996) 4056.
13. K.S. Ramaiah, Y.K. Su, S.J. Vhang, B. Kerr, H.P. Liu, and L.G. Chen Appl. Phys. Lett. 84 2004 3307
14. M. Koike, S. Yamasaki, S. Nagai, N. Koide, S. Asami, H. Amano, and I. Akasaki Appl. Phys. Lett. 68 1996 1403
15. H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, and T. Saitoh Appl. Phys. Lett. 83 2003 4791
16. T.M. Smeeton, M.J. Kappers, J.S. Barnard, M.E. Vickers, and C.J. Humphreys Appl. Phys. Lett. 83 2003 5419
17. D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Woodand, and C.A. Burrus Phys. Rev., B 32 1985 1043
18. D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Woodand, and C.A. Burrus Phys. Rev. Lett. 26 1984 2173
19. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, and S. Nakamura Phys. Rev., B 55 1997 1938
20. A. Statake, Y. Masmoto, T. Miyajima, T. Asatsuma, F. Nakamura, and M. Ikeda Phys. Rev., B 57 1998 R2041
21. S. Khatsevich, D.H. Rich, X. Zhang, W. Zhou, and P.D. Dapkus J. Appl. Phys. 95 2004 1832
22. T. Wang, D. Nakagawa, M. Lachab, T. Sugahara, and S. Sakai Appl. Phys. Lett. 74 1999 3128
23. T. Wang, D. Nakagawa, J. Wang, T. Sugahara, and S. Sakai Appl. Phys. Lett. 73 1998 3571
24. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki Jpn. J. Appl. Phys., Part 2 36 1997 L382
25. R. Möglich, and R. Rompe Z. Phys. 119 1942 492
26. J. Bardeen, and W. Shockley Phys. Rev. 80 1950 72
27. M.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur Properties of Advancd Semiconductor Materials 2001 Wiley New York 4
28. Q. Guo, and A. Yoshida Jpn. J. Appl. Phys. 33 1994 2453
29. Kazlauskas, G. Tamulaitis, A. ukauskas, M.A. Khan, J.W. Yang, J. Zhang, G. Simin, M.S. Shur, and R. Gaska Appl. Phys. Lett. 83 2003 3722
30. Jin Seo Im, Sabine Heppel, Holger Kollmer, Alexander Sohmer, Jurgen Off, Ferdinand Scholz, and Andreas Hangleiter J. Cryst. Growth 189/190 1998 597