Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

IEEE Photonics Technology Letters

Volumn 21, Issue 19, 2009, Pages 1474-1476

  Wan, C T ^a   Su, Y K ^a   Yu, H C ^a,b   Huang, C Y ^a   Lin, W H ^a   Chen, W C ^a   Tseng, H C ^c   Horng, J B ^d   Hu, C ^d   Tsau, Seth ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Stanford University   (United States)

^c KUN SHAN UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

InGaAs; Lasers; Metal organic vapor phase epitaxy (MOVPE)

Indexed keywords

1060 NM; GAAS; INGAAS; INTERNAL LOSS; LASING WAVELENGTH; METAL-ORGANIC VAPOR PHASE EPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY (MOVPE); SINGLE QUANTUM; STRAIN-COMPENSATED LAYERS; TRANSPARENCY CURRENT DENSITY;

CRYSTAL GROWTH; GALLIUM ALLOYS; LASERS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SUPERLATTICES; TRANSPARENCY; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 70349600854     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2028654     Document Type: Article

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