Strain-compensated AlGaNGaNInGaN cladding layers in homoepitaxial nitride devices

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Czernecki, R ^a   Krukowski, S ^b,c   Targowski, G ^c   Prystawko, P ^c   Sarzynski, M ^c   Krysko, M ^c   Kamler, G ^c   Grzegory, I ^c   Leszczynski, M ^c   Porowski, S ^c  

^a TOPGAN LTD   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; LATTICE MISMATCH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; STRAIN ENERGY;

CLADDING STRUCTURES; EPITAXIAL STRUCTURE; PARASITIC EFFECTS;

SEMICONDUCTOR DEVICES;

EID: 36849052302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2823587     Document Type: Article

References (7)

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