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Volumn 519, Issue 14, 2011, Pages 4519-4522
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Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties
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Author keywords
Al doping; Hot Wire CVD; Microcrystalline; p type; Silicon carbide; Thin film
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Indexed keywords
ALUMINUM COMPOUNDS;
LIGHT ABSORPTION;
MICROCRYSTALLINE SILICON;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
SUBSTRATES;
ALUMINUM;
CHEMICAL VAPOR DEPOSITION;
DEFECTS;
ELECTRIC PROPERTIES;
ELECTRONS;
FILM PREPARATION;
PARAMAGNETIC MATERIALS;
PARAMAGNETISM;
RESONANCE;
SEMICONDUCTING SILICON COMPOUNDS;
SPIN DYNAMICS;
THIN FILMS;
WIRE;
AL-DOPING;
HOT WIRE CVD;
HYDROGEN DESORPTION;
MICROCRYSTALLINE;
ORDERS OF MAGNITUDE;
P-TYPE;
SUBSTRATE TEMPERATURE;
THREE ORDERS OF MAGNITUDE;
A-SI:H;
CRYSTALLINITIES;
DARK CONDUCTIVITY;
DEPOSITION PRESSURES;
DOPED MATERIALS;
DOPED SILICON;
DOPING CONCENTRATION;
ELECTRON SPIN DENSITY;
ESR SPECTRA;
FILAMENT TEMPERATURE;
G-VALUES;
HOT WIRE CHEMICAL VAPOR DEPOSITION;
LINE SHIFTS;
N-TYPE CONDUCTIVITY;
PARAMAGNETIC DEFECTS;
PREPARATION PARAMETERS;
SPIN DENSITIES;
STRUCTURAL AND ELECTRICAL PROPERTIES;
THIN FILM SOLAR CELLS;
WINDOW LAYER;
THIN FILMS;
ELECTRON SPIN RESONANCE SPECTROSCOPY;
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EID: 79958827762
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.320 Document Type: Conference Paper |
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Times cited : (4)
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References (16)
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