An effective-field approach for the Fowler-Nordheim tunneling current through a metal-oxide-semiconductor charged barrier

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1262-1265

  Miranda, E ^a   Redin, G ^a   Faigon A ^a,b  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b Facultad de Ciencias Naturales e Instituto M Lillo   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC INSULATORS; FERMI LEVEL; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

TRAPPED CHARGE; TUNNELING CURRENTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031207971     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366535     Document Type: Article

References (17)

1. C. Chen and C. Wu, Solid-State Electron. 29, 1059 (1986).
2. D. Geppert, J. Appl. Phys. 33, 2993 (1962).
3. P. Olivo, B. Riccó, and E. Sangiorni, J. Appl. Phys. 54, 5267 (1983).
4. S. Oh and Y. Yeow, Solid-State Electron. 32, 507 (1989).
5. S. Elrharbi, M. Jourdain, and A. Meinertzhagen, J. Appl. Phys. 76, 1013 (1994).
6. P. Fazan, M. Dutoit, C. Martin, and M. Ilegems, Solid-State Electron. 30, 829 (1987).
7. R. Patrikar, R. Lal, and J. Vasi, J. Appl. Phys. 74, 4598 (1993).
8. R. Muller and T. Kamins, Device Electronics for Integrated Circuits (Wiley, New York, 1996).
9. R. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928).
10. F. Lenzlinger and E. Snow, J. Appl. Phys. 40, 278 (1969).
11. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchwowsky, Solid-State Electron 28, 717 (1985).
12. P. Solomom, J. Appl. Phys. 48, 3843 (1977).
13. S. Holland, I. Chen, T. Ma, and C. Hu, IEEE Electron Device Lett. 5, 302 (1984).
14. E. Avni and J. Shappir, J. Appl. Phys. 64, 734 (1988).
15. E. Nicollian and J. Brews, MOS, Physics and Technology (Wiley, New York, 1982).
16. Q. Huang, J. Appl. Phys. 78, 1254 (1995).
17. P. Fazan, M. Dutoit, C. Martin, and M. Ilegems, Solid-State Electron. 30, 829 (1987).