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Volumn 43, Issue 8, 2003, Pages 1199-1202

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; IONIZATION;

EID: 0043166551     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00172-0     Document Type: Conference Paper
Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.