SCOPUS 정보 검색 플랫폼

Volumn 42, Issue 6, 2002, Pages 935-941

Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression

(3) Miranda, E a Redin, G a Faigon A a

a UNIVERSIDAD DE BUENOS AIRES (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC INSULATORS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GATES (TRANSISTOR); OXIDES; STRESSES;

INSULATOR BARRIER; STRESS POLARITY;

MOS DEVICES;

EID: 0036603704 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(02)00009-4 Document Type: Article

Times cited : (11)

References (26)

1
- 0023400405
- (1987) Solid-State Electron , vol.30 , pp. 829
- Fazan, P.¹ Dutoit, M.² Martin, C.³ Ilegems, M.⁴

2
- 0024684552
- (1989) Solid-State Electron , vol.32 , pp. 507
- Oh, S.¹ Yeow, Y.²

3
- 0000344341
- (1991) J Appl Phys , vol.70 , pp. 3712
- Lopez-Villanueva, J.¹ Jimenez-Tejada, J.² Cartujo, P.³ Bausells, J.⁴ Carceller, J.⁵

4
- 0001623546
- (1997) J Appl Phys , vol.82 , pp. 2548
- Pananakakis, G.¹ Ghibaudo, G.² Papadas, C.³ Vincent, E.⁴ Kies, R.⁵

5
- 0000066287
- (1998) J Appl Phys , vol.83 , pp. 2662
- Samanta, P.¹ Sarkar, C.²

6
- 0024122432
- (1988) IEEE Trans Electron Devices , vol.35 , pp. 2268
- Lee, J.¹ Chen, I.² Hu, C.³

7
- 0009797753
- (1986) J Appl Phys , vol.60 , pp. 2024
- Nissan-Cohen, Y.¹ Shappir, J.² Frohman-Bentchkowsky, D.³

8
- 21544467967
- (1989) J Appl Phys , vol.65 , pp. 2342
- DiMaria, D.¹ Stasiak, J.²

9
- 0033742736
- (2000) Semicond Sci Technol , vol.15 , pp. 462
- McPherson, J.¹ Khamankar, R.²

10
- 0004059445
- Englewood Cliffs, NJ: Prentice Hall
- (1997) MOSFET modeling with SPICE, Principles and Practice
- Fotty, D.¹

11
- 0031207971
- (1997) J Appl Phys , vol.82 , pp. 1262
- Miranda, E.¹ Redin, G.² Faigón, A.³

12
- 0006109486
- (1993) J Appl Phys , vol.74 , pp. 24
- El-Hdiy, A.¹ Salace, G.² Petit, C.³ Jourdain, M.⁴ Vuillaume, D.⁵

13
- 0006073441
- (1996) Appl Phys Lett , vol.68 , pp. 3790
- Kies, R.¹ Egilsson, T.² Ghibaudo, G.³ Pananakakis, G.⁴

14
- 0028514381
- (1994) Trans Electron Devices , vol.41 , pp. 1669
- Ku, P.¹ Schroder, D.²

15
- 0000928931
- (1928) Proc Roy Soc (London) Ser A , vol.119 , pp. 173
- Fowler, R.¹ Nordheim, L.²

16
- 36849097956
- (1969) J Appl Phys , vol.40 , pp. 278
- Lenzlinger, F.¹ Snow, E.²

17
- 0006040845
- New York: McGraw-Hill
- (1989) Semiconductor devices , pp. 316
- Zambuto, M.¹

18
- 26544457390
- (1981) Tech Digest IEDM , pp. 388
- Jenq, C.¹ Ranganath, T.² Huang, C.³ Jones, H.⁴ Chang, T.⁵

19
- 0020763676
- (1983) J Electrochem Soc , vol.130 , pp. 1394
- Radojcic, R.¹

20
- 0026882662
- (1992) Solid-State Electron , vol.35 , pp. 843
- Siergiej, R.¹ White, M.² Saks, N.³

21
- 0006111143
- (1976) Solid-State Commun , vol.20 , pp. 179
- Weimberg, Z.¹ Harstein, A.²

22
- 0006072596
- (1988) J Appl Phys , vol.64 , pp. 734
- Avni, E.¹ Shappir, J.²

23
- 0026388475
- (1991) Solid-State Electron , vol.34 , pp. 1375
- Papadas, C.¹ Morfouli, P.² Ghibaudo, G.³ Pananakakis, G.⁴

24
- 0027593598
- (1993) Solid-State Electron , vol.36 , pp. 723
- Patrikar, R.M.¹ Lal, R.² Vasi, J.³

25
- 0030195956
- (1996) IEEE Trans Electron Devices , vol.43 , pp. 1133
- Scott, R.¹ Dumin, N.² Hughes, T.³ Dumin, D.⁴ Moore, B.⁵

26
- 0004257698
- London: Academic Press
- (1979) Statistical analysis
- Afifi, A.A.¹

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