Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Choi, Jeong M ^a   Hwang, D K ^a   Kim, Jae Hoon ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; NICKEL COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

GATE ELCTRODES; PENTACENE; SHEET RESISTANCE; TRANSPARENT THIN FILM TRANSISTORS (TTFT);

THIN FILM TRANSISTORS;

EID: 17944369426     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1886901     Document Type: Article

References (20)

1. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., Appl. Phys. Lett. 82, 1117 (2003).
2. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, J. Appl. Phys. 93, 1624 (2003).
3. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
4. S. Bethke, H. Pan, and B. W. Wessels, Appl. Phys. Lett. 52, 138 (1988).
5. W. Göpel, J. Vac. Sci. Technol. 16, 1229 (1979).
6. H. S. Bae, M. H. Yoon, J. H. Kim, and S. Im, Appl. Phys. Lett. 83, 5313 (2003).
7. H. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono, Adv. Mater. (Weinheim, Ger.) 16, 312 (2004).
8. W. E. Howard, in Thin-Film Transistors, edited by, C. R. Kagan, and, P. Andry, (Marcel Dekker, New York, 2003), p. 24.
9. B. J. Noriss, J. Anderson, J. F. Wager, and D. A. Keszler, J. Phys. D 36, L105 (2003).
10. V. Y. Butko, X. Chi, D. V. Lang, and A. P. Ramirez, Appl. Phys. Lett. 83, 4773 (2003).
11. R. A. Street, D. Knipp, and A. R. Völkel, Appl. Phys. Lett. 80, 1658 (2002).
12. H. Klauk, D. J. Gundlach, M. Bonse, C.-C. Kuo, and T. N. Jackson, Appl. Phys. Lett. 76, 1692 (2000).
13. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Electron Device Lett. 18, 87 (1997).
14. S. S. Kim, Y. S. Choi, K. Kim, J. H. Kim, and S. Im, Appl. Phys. Lett. 82, 639 (2003).
15. J. Lee, S. S. Kim, K. Kim, J. H. Kim, and S. Im, Appl. Phys. Lett. 84, 1701 (2004).
16. H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 83, 1029 (2003).
17. A. Fujimori and F. Minami, Phys. Rev. B 30, 957 (1984).
18. G. Wakefield, P. J. Dobson, Y. Y. Foo, A. Loni, A. Simons, and J. L. Hutchison, Semicond. Sci. Technol. 12, 1304 (1997).
19. J. M. Nel, F. D. Auret, L. Wu, M. J. Legodi, W. E. Meyer, and M. Hayes, Sens. Actuators B 100, 270 (2004).
20. J. Lee, J. H. Kim, and S. Im, Appl. Phys. Lett. 83, 2689 (2003).