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Volumn 96, Issue 22, 2010, Pages

Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

(7) Seo, Hyungtak a Cho, Young Je b Kim, Jinwoo c M bobade, Santosh b Park, Kyoung Youn b Lee, Jaegab d Choi, Duck Kyun b

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b Hanyang University (South Korea)

c North Carolina State University (United States)

d Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS METALS; BACKGROUND LEVEL; CARRIER DENSITY; CONDUCTION BAND EDGE; DEEP ULTRAVIOLET; EXCESS ELECTRONS; FIELD-EFFECT MOBILITIES; N-DOPED; N-TYPE DOPING; OFF CURRENT; OXIDE INTERFACES; PHOTO-INDUCED; ROOM TEMPERATURE; SCAVENGING PROCESS; TWO PHOTON; ULTRAVIOLET IRRADIATIONS; UV IRRADIATION;

ELECTRON MOBILITY; METALLIC COMPOUNDS; MOS DEVICES; SCAVENGING; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

IRRADIATION;

EID: 77953558602 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3429586 Document Type: Article

Times cited : (30)

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