Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy

Thin Solid Films

Volumn 519, Issue 19, 2011, Pages 6394-6398

  Han, Seok Kyu ^a   Hong, Soon Ku ^a   Lee, Jae Wook ^b   Kim, Jae Goo ^a   Jeong, Myoungho ^b   Lee, Jeong Yong ^b   Hong, Sun Ig ^a   Park, Jin Sub ^c   Ihm, Young Eon ^a   Ha, Jun Seok ^d   Yao, Takafumi ^e  

^a Chungnam National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hanyang University   (South Korea)

^d Chonnam National University   (South Korea)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

Epitaxy; Molecular beam epitaxy; Nonpolar; Semiconductor; Thin film; Zinc oxide

Indexed keywords

A-PLANE; ANISOTROPIC SURFACES; CRYSTAL QUALITIES; M-PLANE; NON-POLAR; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE; ROCKING CURVES; SAPPHIRE SUBSTRATES; SEMICONDUCTOR; SINGLE-CRYSTALLINE; STACKING FAULT DENSITY; THREADING DISLOCATION; ZNO; ZNO FILMS;

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE;

ZINC OXIDE;

EID: 79958214322     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.093     Document Type: Article

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