Structural and Optical Characteristics of InGaN/GaN multiple quantum wells with different growth interruption

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 165-168

  Cho, H K ^a   Lee, J Y ^a   Sharma, N ^b   Humphreys, J ^b   Yang, G M ^c   Kim, C S ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541079     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<165::AID-PSSB165>3.0.CO;2-N     Document Type: Article

References (6)

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