Insights for void formation in ion-implanted Ge

Thin Solid Films

Volumn 519, Issue 18, 2011, Pages 5962-5965

  Darby, B L ^a   Yates, B R ^a   Rudawski, N G ^a   Jones, K S ^a   Kontos, A ^b   Elliman, R G ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Annealing; Germanium; Ion implantation; Transmission electron microscopy; Voids

Indexed keywords

GE SUBSTRATES; IMPLANT ENERGY; ION IMPLANTATION ENERGY; MICRO EXPLOSION; SURFACE COVERAGES; VACANCY CLUSTERING; VOID CLUSTERS; VOID FORMATION; VOIDS;

GERMANIUM; ION IMPLANTATION; ISOTHERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY;

IONS;

EID: 79958135817     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.040     Document Type: Article

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