Ion implanted nanostructures on Ge(111) surfaces observed by atomic force microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 809-813

  Chen, Y J ^a   Wilson, I H ^a   Cheung, W Y ^a   Xu, J B ^a   Wong, S P ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COBALT; CURRENT DENSITY; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SURFACE ROUGHNESS; TEMPERATURE;

CELLULAR NANOSTRUCTURES; IMAGE DISTORTIONS;

NANOSTRUCTURED MATERIALS;

EID: 0031192506     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589414     Document Type: Article

References (19)

1. I. H. Wilson, J. Appl. Phys. 53, 1698 (1982).
2. B. R. Appleton, O. W. Holland, J. Narayan, O. E. Schow III, J. S. Williams, and E. Lawson, Appl. Phys. Lett. 41, 711 (1982).
3. O. W. Holland, B. R. Appleton, and J. Narayan, J. Appl. Phys. 54, 2295 (1983).
4. L. M. Wang and R. C. Birtcher, Appl. Phys. Lett. 55, 2494 (1989); Philos. Mag. A 64, 1209 (1991), and references therein.
5. L. M. Wang and R. C. Birtcher, Appl. Phys. Lett. 55, 2494 (1989); Philos. Mag. A 64, 1209 (1991), and references therein.
6. R. C. Birtcher, Mater. Res. Soc. Symp. Proc. 279, 129 (1993).
7. I. H. Wilson, Y. J. Chen, J. B. Xu, R. A. B. Devine, and C. Jeynes, Surf. Interface Anal. 24, 881 (1996).
8. Q. Peng, S. P. Wong, J. B. Xu, and I. H. Wilson, Mater. Res. Soc. Symp. Proc. 396, 763 (1996); another example is our recent AFM observation of iron (Fe) implanted Si(100) surfaces.
9. J. E. Griffith, D. A. Grigg, M. J. Vasile, P. E. Russell, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 9, 3596 (1991), and references therein.
10. P. Grutter, W. Zimmermann-Edling, and D. Brodbeck, Appl. Phys. Lett. 60, 2741 (1992).
11. K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B 12, 3176 (1994); ibid., 13, 344 (1995); Thin Solid Films 257, 15 (1995).
12. K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B 12, 3176 (1994); ibid., 13, 344 (1995); Thin Solid Films 257, 15 (1995).
13. K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B 12, 3176 (1994); ibid., 13, 344 (1995); Thin Solid Films 257, 15 (1995).
14. G. Kaup, J. Schmeyers, U. Pogodda, M. Haak, T. Marquardt, and M. Plagmann, Thin Solid Films 264, 205 (1995).
15. L. Hellemans, K. Waeyaert, F. Hennau, L. Stockman, II. Heyvaet, and C. Van Haesendonck, J. Vac. Sci. Technol. B 9, 1309 (1991).
16. F. Atamny and A. Baiker, Surf. Sci. 323, L314 (1995).
17. R. C. Birtcher, M. H. Grimsditch, and L. E. McNeil, Phys. Rev. B 50, 8990 (1994).
18. Y. J. Chen, W. Y. Cheung, I. H. Wilson, J. B. Xu, and S. P. Wong (unpublished).
19. For high dose implantation, we used an air scanning tunneling microscope (STM) to observe the implanted samples and found that there was an increase of electrical conductivity and resistance to oxidation compared with unimplanted surfaces on which the tunneling current was unstable when the tip was stationary and a very noisy trace was obtained upon scanning. This is similar to cobalt and iron implanted silicon samples; see, for example, A. A. Bukharaev, F. F. Gubydullin, A. V. Nazarov, and N. V. Berdunov, Phys. Status Solid A 131, 79 (1992); for low dose implantation, ultrahigh vacuum (UHV) STM is required to avoid the effects of oxidation.