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For high dose implantation, we used an air scanning tunneling microscope (STM) to observe the implanted samples and found that there was an increase of electrical conductivity and resistance to oxidation compared with unimplanted surfaces on which the tunneling current was unstable when the tip was stationary and a very noisy trace was obtained upon scanning. This is similar to cobalt and iron implanted silicon samples; see, for example, A. A. Bukharaev, F. F. Gubydullin, A. V. Nazarov, and N. V. Berdunov, Phys. Status Solid A 131, 79 (1992); for low dose implantation, ultrahigh vacuum (UHV) STM is required to avoid the effects of oxidation.
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