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Volumn 15, Issue 4, 1997, Pages 809-813

Ion implanted nanostructures on Ge(111) surfaces observed by atomic force microscopy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COBALT; CURRENT DENSITY; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SURFACE ROUGHNESS; TEMPERATURE;

EID: 0031192506     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589414     Document Type: Article
Times cited : (12)

References (19)
  • 5
    • 0026399206 scopus 로고
    • and references therein
    • L. M. Wang and R. C. Birtcher, Appl. Phys. Lett. 55, 2494 (1989); Philos. Mag. A 64, 1209 (1991), and references therein.
    • (1991) Philos. Mag. A , vol.64 , pp. 1209
  • 12
    • 0347417452 scopus 로고
    • K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B 12, 3176 (1994); ibid., 13, 344 (1995); Thin Solid Films 257, 15 (1995).
    • (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 344
  • 13
    • 0347417450 scopus 로고
    • K. L. Westra and D. J. Thomson, J. Vac. Sci. Technol. B 12, 3176 (1994); ibid., 13, 344 (1995); Thin Solid Films 257, 15 (1995).
    • (1995) Thin Solid Films , vol.257 , pp. 15
  • 19
    • 84990717894 scopus 로고
    • For high dose implantation, we used an air scanning tunneling microscope (STM) to observe the implanted samples and found that there was an increase of electrical conductivity and resistance to oxidation compared with unimplanted surfaces on which the tunneling current was unstable when the tip was stationary and a very noisy trace was obtained upon scanning. This is similar to cobalt and iron implanted silicon samples; see, for example, A. A. Bukharaev, F. F. Gubydullin, A. V. Nazarov, and N. V. Berdunov, Phys. Status Solid A 131, 79 (1992); for low dose implantation, ultrahigh vacuum (UHV) STM is required to avoid the effects of oxidation.
    • (1992) Phys. Status Solid A , vol.131 , pp. 79
    • Bukharaev, A.A.1    Gubydullin, F.F.2    Nazarov, A.V.3    Berdunov, N.V.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.