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Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

Nanostructuring in Ge by self-ion implantation

(6) Romano, L a Impellizzeri, G a Tomasello, M V b Giannazzo, F c Spinella, C c Grimaldi, M G a

a UNIVERSITY OF CATANIA (Italy)

b SCUOLA SUPERIORE DI CATANIA (Italy)

c CNR IMM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR STRUCTURE; ION BEAM IMPLANTATION; ION FLUENCES; MICRO EXPLOSION; NANO-STRUCTURING; NANOSCALE STRUCTURE; ROOM TEMPERATURE; SELF-ION IMPLANTATION; SELF-ORGANIZATIONS;

ATOMIC FORCE MICROSCOPY; GERMANIUM; ION BEAMS; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY;

SCANNING ELECTRON MICROSCOPY;

EID: 77952406620 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3372757 Document Type: Article

Times cited : (81)

References (19)

1
- 0000464473
- JAPIAU 0021-8979. 10.1063/1.365193
- E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland, M. I. Current, T. Diaz de la Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, and A. F. Tasch, J. Appl. Phys. JAPIAU 0021-8979 81, 6513 (1997). 10.1063/1.365193
- (1997) J. Appl. Phys. , vol.81 , pp. 6513
- Chason, E.¹ Picraux, S.T.² Poate, J.M.³ Borland, J.O.⁴ Current, M.I.⁵ Diaz De La Rubia, T.⁶ Eaglesham, D.J.⁷ Holland, O.W.⁸ Law, M.E.⁹ Magee, C.W.¹⁰ Mayer, J.W.¹¹ Melngailis, J.¹² Tasch, A.F.¹³

2
- 34948871509
- Engineering of nanostructured carbon materials with electron or ion beams
- DOI 10.1038/nmat1996, PII NMAT1996
- A. V. Krasheninnikov and F. Banhart, Nature Mater. NMAACR 1476-1122 6, 723 (2007). 10.1038/nmat1996 (Pubitemid 47515308)
- (2007) Nature Materials , vol.6 , Issue.10 , pp. 723-733
- Krasheninnikov, A.V.¹ Banhart, F.²

3
- 0020098511
- EFFECTS OF SELF-ION BOMBARDMENT (30-500 kev) ON THE SURFACE TOPOGRAPHY OF SINGLE-CRYSTAL GERMANIUM.
- DOI 10.1063/1.331636
- I. H. Wilson, J. Appl. Phys. JAPIAU 0021-8979 53, 1698 (1982). 10.1063/1.331636 (Pubitemid 12524211)
- (1982) Journal of Applied Physics , vol.53 , Issue.PART 1 , pp. 1698-1705
- Wilson, I.H.¹

4
- 0035302863
- Self-ion-induced swelling of germanium
- DOI 10.1016/S0168-583X(00)00597-8, PII S0168583X00005978
- B. Stritzker, R. G. Elliman, and J. Zou, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 175-177, 193 (2001). 10.1016/S0168-583X(00)00597-8 (Pubitemid 32528891)
- (2001) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms , vol.175-177 , pp. 193-196
- Stritzker, B.¹ Elliman, R.G.² Zou, J.³

5
- 0020749791
- DOI 10.1063/1.332385
- O. W. Holland, B. R. Appleton, and J. Narayan, J. Appl. Phys. JAPIAU 0021-8979 54, 2295 (1983). 10.1063/1.332385 (Pubitemid 13563014)
- (1983) Journal of Applied Physics , vol.54 , Issue.5 , pp. 2295-2301
- Holland, O.W.¹ Appleton, B.R.² Narayan, J.³

6
- 0031546616
- NIMBEU 0168-583X. 10.1016/S0168-583X(96)00568-X
- H. Huber, W. Assmann, S. A. Karamian, A. Mücklich, W. Prusseit, E. Gazis, G. Grötzschel, M. Kokkoris, E. Kossionidis, H. D. Mieskes, and R. Vlastou, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 122, 542 (1997). 10.1016/S0168-583X(96)00568-X
- (1997) Nucl. Instrum. Methods Phys. Res. B , vol.122 , pp. 542
- Huber, H.¹ Assmann, W.² Karamian, S.A.³ Mücklich, A.⁴ Prusseit, W.⁵ Gazis, E.⁶ Grötzschel, G.⁷ Kokkoris, M.⁸ Kossionidis, E.⁹ Mieskes, H.D.¹⁰ Vlastou, R.¹¹

7
- 31544476598
- Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge
- DOI 10.1116/1.2151904
- T. Janssens, C. Huyghebaert, D. Vanhaeren, G. Winderickx, A. Satta, M. Meuris, and W. Vandervorst, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 510 (2006). 10.1116/1.2151904 (Pubitemid 43164266)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.1 , pp. 510-514
- Janssens, T.¹ Huyghebaert, C.² Vanhaeren, D.³ Winderickx, G.⁴ Satta, A.⁵ Meuris, M.⁶ Vandervorst, W.⁷

8
- 67649790855
- JAPIAU 0021-8979. 10.1063/1.3041653
- S. Koffel, P. Scheiblin, A. Claverie, and G. Benassayag, J. Appl. Phys. JAPIAU 0021-8979 105, 013528 (2009). 10.1063/1.3041653
- (2009) J. Appl. Phys. , vol.105 , pp. 013528
- Koffel, S.¹ Scheiblin, P.² Claverie, A.³ Benassayag, G.⁴

9
- 34250730689
- + implanted Ge(1 0 0): A systematic investigation as a function of the implantation substrate temperature
- DOI 10.1016/j.susc.2006.11.075, PII S0039602806012477
- L. Ottaviano, A. Verna, V. Grossi, P. Parisse, S. Piperno, M. Passacantando, G. Impellizzeri, and F. Priolo, Surf. Sci. SUSCAS 0039-6028 601, 2623 (2007). 10.1016/j.susc.2006.11.075 (Pubitemid 46962591)
- (2007) Surface Science , vol.601 , Issue.13 , pp. 2623-2627
- Ottaviano, L.¹ Verna, A.² Grossi, V.³ Parisse, P.⁴ Piperno, S.⁵ Passacantando, M.⁶ Impellizzeri, G.⁷ Priolo, F.⁸

10
- 36049001544
- Nanoporous structure formations on germanium surfaces by focused ion beam irradiations
- DOI 10.1088/0953-8984/19/44/445002, PII S095389840750843X
- J. Yanagisawa, K. Takarabe, K. Ogushi, K. Gamo, and Y. Akasaka, J. Phys.: Condens. Matter JCOMEL 0953-8984 19, 445002 (2007). 10.1088/0953-8984/19/44/ 445002 (Pubitemid 350095974)
- (2007) Journal of Physics Condensed Matter , vol.19 , Issue.44 , pp. 445002
- Yanagisawa, J.¹ Takarabe, K.² Ogushi, K.³ Gamo, K.⁴ Akasaka, Y.⁵

11
- 33750005664
- Competition between damage buildup and dynamic annealing in ion implantation into Ge
- DOI 10.1063/1.2360238
- M. Posselt, L. Bischoff, D. Grambole, and F. Herrmann, Appl. Phys. Lett. APPLAB 0003-6951 89, 151918 (2006). 10.1063/1.2360238 (Pubitemid 44570543)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 151918
- Posselt, M.¹ Bischoff, L.² Grambole, D.³ Herrmann, F.⁴

12
- 0005368571
- APPLAB 0003-6951. 10.1063/1.91308
- G. L. Destefanis and J. P. Gailliard, Appl. Phys. Lett. APPLAB 0003-6951 36, 40 (1980). 10.1063/1.91308
- (1980) Appl. Phys. Lett. , vol.36 , pp. 40
- Destefanis, G.L.¹ Gailliard, J.P.²

13
- 0000817470
- APPLAB 0003-6951. 10.1063/1.1290722
- S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, V. S. J. Craig, and G. Li, Appl. Phys. Lett. APPLAB 0003-6951 77, 1455 (2000). 10.1063/1.1290722
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1455
- Kucheyev, S.O.¹ Williams, J.S.² Jagadish, C.³ Zou, J.⁴ Craig, V.S.J.⁵ Li, G.⁶

14
- 0037103478
- Formation of cellular defect structure on GaSb ion-implanted at low temperature
- DOI 10.1063/1.1493662
- N. Nitta, M. Taniwaki, Y. Hayashi, and T. Yoshiie, J. Appl. Phys. JAPIAU 0021-8979 92, 1799 (2002). 10.1063/1.1493662 (Pubitemid 34946402)
- (2002) Journal of Applied Physics , vol.92 , Issue.4 , pp. 1799
- Nitta, N.¹ Taniwaki, M.² Hayashi, Y.³ Yoshiie, T.⁴

15
- 0038781397
- MRSBEA 0883-7694
- C. M. Lieber, MRS Bull. MRSBEA 0883-7694 28, 486 (2003).
- (2003) MRS Bull. , vol.28 , pp. 486
- Lieber, C.M.¹

16
- 0003412161
- Stopping and Ranges of Ions in Matter (Pergamon, New York)
- J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Stopping and Ranges of Ions in Matter Vol. 1 (Pergamon, New York, 1984).
- (1984) The Stopping and Range of Ions in Solids , vol.1
- Ziegler, J.F.¹ Biersack, J.P.² Littmark, U.³

17
- 28744435407
- Ion-irradiation-induced stresses and swelling in amorphous Ge thin films
- DOI 10.1103/PhysRevB.71.134102, 134102
- S. G. Mayr and R. S. Averback, Phys. Rev. B PRBMDO 0163-1829 71, 134102 (2005). 10.1103/PhysRevB.71.134102 (Pubitemid 41754300)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.71 , Issue.13 , pp. 1-8
- Mayr, S.G.¹ Averback, R.S.²

18
- 0003656195
- (Kluwer Academic, Boston)
- E. Rimini, Ion Implantation: Basics to Device Fabrication (Kluwer Academic, Boston, 1995).
- (1995) Ion Implantation: Basics to Device Fabrication
- Rimini, E.¹

19
- 0242411512
- APPLAB 0003-6951. 10.1063/1.102009
- L. M. Wang and R. C. Birtcher, Appl. Phys. Lett. APPLAB 0003-6951 55, 2494 (1989). 10.1063/1.102009
- (1989) Appl. Phys. Lett. , vol.55 , pp. 2494
- Wang, L.M.¹ Birtcher, R.C.²

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