-
1
-
-
0001289849
-
Characterisation of damage in ion implanted Ge
-
Appleton B.R., Holland O.W., Narayan J., Schow O.E., Williams J.S., Short K.T., Lawson E. Characterisation of damage in ion implanted Ge. Appl. Phys. Lett. 41:(8):1982;711-712
-
(1982)
Appl. Phys. Lett.
, vol.41
, Issue.8
, pp. 711-712
-
-
Appleton, B.R.1
Holland, O.W.2
Narayan, J.3
Schow, O.E.4
Williams, J.S.5
Short, K.T.6
Lawson, E.7
-
3
-
-
0020749791
-
Ion implantation damage and annealing in germanium
-
Holland O.W., Appleton B.R., Narayan J. Ion implantation damage and annealing in germanium. J. Appl. Phys. 54:(5):1983;2295-2301
-
(1983)
J. Appl. Phys.
, vol.54
, Issue.5
, pp. 2295-2301
-
-
Holland, O.W.1
Appleton, B.R.2
Narayan, J.3
-
4
-
-
0000296375
-
Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices
-
Kirk E.C.G., Williams D.A., Ahmed H. Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices. Inst. Phys. Conf. Ser. 100:1989;501-506
-
(1989)
Inst. Phys. Conf. Ser.
, vol.100
, pp. 501-506
-
-
Kirk, E.C.G.1
Williams, D.A.2
Ahmed, H.3
-
5
-
-
0002318898
-
Transmission electron microscopy of semiconductor based products
-
Mardinly J., Susnitzky D. Transmission electron microscopy of semiconductor based products. Mater. Res. Soc. Symp. Proc. 523:1998;3-12
-
(1998)
Mater. Res. Soc. Symp. Proc.
, vol.523
, pp. 3-12
-
-
Mardinly, J.1
Susnitzky, D.2
-
6
-
-
0000971911
-
Cross-sectional TEM specimen preparation of semiconductor devices by focused ion beam etching
-
Park K. Cross-sectional TEM specimen preparation of semiconductor devices by focused ion beam etching. Mater. Res. Soc. Proc. 199:1990;271-280
-
(1990)
Mater. Res. Soc. Proc.
, vol.199
, pp. 271-280
-
-
Park, K.1
-
7
-
-
3042568615
-
-
PhD Thesis, University of New South Wales.
-
Rubanov S. 2002, PhD Thesis, University of New South Wales.
-
(2002)
-
-
Rubanov, S.1
-
8
-
-
0035388519
-
Investigation of the structure of damage layers in TEM samples prepared using a FIB
-
Rubanov S., Munroe P.R. Investigation of the structure of damage layers in TEM samples prepared using a FIB. J. Mater. Sci. Lett. 20:(13):2001;1181-1183
-
(2001)
J. Mater. Sci. Lett.
, vol.20
, Issue.13
, pp. 1181-1183
-
-
Rubanov, S.1
Munroe, P.R.2
-
9
-
-
0037381418
-
The effect of the Au sputter coating films in minimising damage in FIB-produced TEM specimens
-
Rubanov S., Munroe P.R. The effect of the Au sputter coating films in minimising damage in FIB-produced TEM specimens. Mater. Lett. 57:2003;2238-2241
-
(2003)
Mater. Lett.
, vol.57
, pp. 2238-2241
-
-
Rubanov, S.1
Munroe, P.R.2
-
10
-
-
2942514361
-
FIB-induced damage in dilicon
-
in press
-
Rubanov S., Munroe P.R. FIB-induced damage in dilicon. J Micros. 2004;. in press
-
(2004)
J Micros
-
-
Rubanov, S.1
Munroe, P.R.2
-
11
-
-
3042654555
-
Damage in III-V compounds during focused ion beam milling
-
submitted for publication
-
Rubanov S., Munroe P.R. Damage in III-V compounds during focused ion beam milling. Ultramicroscopy. 2004;. submitted for publication
-
(2004)
Ultramicroscopy
-
-
Rubanov, S.1
Munroe, P.R.2
-
12
-
-
0000259157
-
Focused ion-beam line profiles: A study of some factors affecting beam broadening
-
Templeton I.M., Champion H.G. Focused ion-beam line profiles: a study of some factors affecting beam broadening. J. Vaccine Sci. Technol. B. 13:(6):1995;2603-2606
-
(1995)
J. Vaccine Sci. Technol. B
, vol.13
, Issue.6
, pp. 2603-2606
-
-
Templeton, I.M.1
Champion, H.G.2
-
13
-
-
0033152347
-
Microfabrication techniques using focused ion beams and emergent applications
-
Vasile M.J., Nassar R., Xie J., Guo H. Microfabrication techniques using focused ion beams and emergent applications. Micron. 30:1999;235-244
-
(1999)
Micron
, vol.30
, pp. 235-244
-
-
Vasile, M.J.1
Nassar, R.2
Xie, J.3
Guo, H.4
-
15
-
-
0020098511
-
The effects of self-ion bombardment (30-500 keV) on the surface topography of single-crystal germanium
-
Wilson I.H. The effects of self-ion bombardment (30-500 keV) on the surface topography of single-crystal germanium. J. Appl. Phys. 53:(3):1982;1698-1705
-
(1982)
J. Appl. Phys.
, vol.53
, Issue.3
, pp. 1698-1705
-
-
Wilson, I.H.1
-
16
-
-
0242411512
-
Radiation-induced formation of cavities in amorphous germanium
-
Wang L.M., Bitcher R.C. Radiation-induced formation of cavities in amorphous germanium. Appl. Phys. Lett. 54:(24):1989;2494-2496
-
(1989)
Appl. Phys. Lett.
, vol.54
, Issue.24
, pp. 2494-2496
-
-
Wang, L.M.1
Bitcher, R.C.2
-
17
-
-
0001041831
-
Fabrication of planar and cross-sectional TEM specimens using a focused ion beam
-
Young R.J.G., Kirk E.C.G., Williams D.A., Ahmed H. Fabrication of planar and cross-sectional TEM specimens using a focused ion beam. Mater. Res. Soc. Proc. 199:1990;205-216
-
(1990)
Mater. Res. Soc. Proc.
, vol.199
, pp. 205-216
-
-
Young, R.J.G.1
Kirk, E.C.G.2
Williams, D.A.3
Ahmed, H.4
-
18
-
-
3042607786
-
Formation of self-organized nanostructures on Ge during focused ion beam sputtering
-
in press
-
Zhou W., Cuenat A., Aziz M.J. Formation of self-organized nanostructures on Ge during focused ion beam sputtering. Proc. Micros. Semiconducting Mater. 13:2004;. in press
-
(2004)
Proc. Micros. Semiconducting Mater.
, vol.13
-
-
Zhou, W.1
Cuenat, A.2
Aziz, M.J.3
-
19
-
-
3042522489
-
-
Ziegler J.; 2000, see: www.SRIM.org.
-
(2000)
-
-
Ziegler, J.1
|