Honeycomb voids due to ion implantation in germanium

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2323-2325

  Kaiser, R J ^a   Koffel, S ^b   Pichler, P ^a,c   Bauer, A J ^c   Amon, B ^c   Claverie, A ^d   Benassayag, G ^d   Scheiblin, P ^b   Frey, L ^a,c   Ryssel, H ^a,c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b CEA LETI   (France)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^d CEMES CNRS   (France)

Author keywords

Germanium; Honeycomb voids; Ion implantation

Indexed keywords

COMPREHENSIVE STUDIES; DOSE RATE; HIGH CARRIER MOBILITY; HONEYCOMB VOIDS; P-N JUNCTION; SURFACE-ROUGHENING; VOID FORMATION;

CARRIER MOBILITY; GERMANIUM; HONEYCOMB STRUCTURES; ION BOMBARDMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SURFACE ROUGHNESS;

ION IMPLANTATION;

EID: 76049112132     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.138     Document Type: Article

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