Physical and chemical properties of a Ga-doped ZnO crystal

Physica Scripta

Volumn 83, Issue 6, 2011, Pages

  Stashans, Arvids ^a   Olivos, Katia ^a   Rivera, Richard ^a  

^a UNIVERSIDAD TÉCNICA PARTICULAR DE LOJA   (Ecuador)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DISPLACEMENT; CHEMICAL BONDINGS; DOPED ZNO; ELECTRICAL CONDUCTIVITY; ELECTRONIC BAND STRUCTURE; EXPERIMENTAL DATA; FIRST-PRINCIPLES CALCULATION; FREE ELECTRON; GA DOPANTS; GA-DOPED; HARTREE-FOCK; IONIC BONDING; LOCAL EFFECTS; NEIGHBOURHOOD; PERIODIC SUPERCELL MODEL; PHYSICAL AND CHEMICAL PROPERTIES; SINGLE POINT DEFECTS; SUPER CELL; ZNO CRYSTALS;

ATOMS; CALCULATIONS; CHEMICAL ANALYSIS; CHEMICAL BONDS; CHEMICAL PROPERTIES; DEFECTS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM; POINT DEFECTS; ZINC OXIDE; ZINC SULFIDE;

CRYSTAL IMPURITIES;

EID: 79958130594     PISSN: 00318949     EISSN: 14024896     Source Type: Journal    
DOI: 10.1088/0031-8949/83/06/065604     Document Type: Article

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