SCOPUS 정보 검색 플랫폼

Volumn 88, Issue 7, 2011, Pages 1225-1227

Charge trapping and interface characteristics in normally-off Al 2O3/GaN-MOSFETs

(9) Kim, Ki Won a Jung, Sung Dal a Kim, Dong Seok a Im, Ki Sik a Kang, Hee Sung a Lee, Jung Hee a Bae, Youngho b Kwon, Dae Hyuk c Cristoloveanu, Sorin d

a Kyungpook National University (South Korea)

b Uiduk University (South Korea)

c Kyungil University (South Korea)

d IMEP LAHC (France)

Author keywords

Al2O 3; Charge trapping; GaN; Interface; MOSFETs; Normally off

Indexed keywords

ANNEALING TEMPERATURES; GAN; INSULATING PROPERTIES; INTERFACE CHARACTERISTIC; LOW FIELD MOBILITY; MAXIMUM TRANSCONDUCTANCE; MOSFETS; NORMALLY-OFF; OXIDE TRAPPED CHARGE; SATURATION DRAIN CURRENT; SATURATION REGION; SUBTHRESHOLD SLOPE;

ANNEALING; CHARGE TRAPPING; DRAIN CURRENT; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; MOSFET DEVICES;

ALUMINUM;

EID: 79958034329 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.116 Document Type: Conference Paper

Times cited : (19)

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