Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

  Choi, Jihoon ^a   Lee, Hyun Seok ^a,b   Lee, Taek Sung ^a   Lee, Suyoun ^a   Kim, Won Mok ^a   Kim, Donghwan ^b   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE STABILITY; HOST MATERIALS; IRREVERSIBLE DISSOCIATION; MEMORY OPERATIONS; N CONTENT; N-DOPED; RETARDING AGENT; RICH PHASE;

AMORPHOUS FILMS; BUOYANCY; CRYSTALLIZATION; PHASE STABILITY;

PHASE CHANGE MATERIALS;

EID: 69549110244     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211871     Document Type: Article

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15. 2 content had essentially the same Ge:Sb:Te atomic ratio with N ranging from 0 to ∼15 at. %. Therefore, the difference in growth time between Sb70 Te30 and N-added Sb70 Te30 is unexplainable in terms of a difference in Sb:Te atomic ratio.