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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 6, 2010, Pages 1715-1717

Characteristics of ZnO thin film transistor prepared by two different methods

(4) Haga, Koichi a Sakuma, Mio a Takizawa, Yoshihiro a Seki, Shigeyuki a

a SENDAI NATIONAL COLLEGE OF TECHNOLOGY (Japan)

Author keywords

Electrical properties; LPCVD; Sputtering; Structure; Transistor; ZnO

Indexed keywords

BOTTOM GATE; CERAMIC OXIDES; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HEXAGONAL STRUCTURES; LPCVD; OFF CURRENT; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; PREPARATION METHOD; SI SUBSTRATES; ZNO; ZNO ACTIVE LAYERS; ZNO FILMS; ZNO THIN FILM;

CERAMIC MATERIALS; ELECTRIC PROPERTIES; FILM PREPARATION; FORCE MEASUREMENT; METALLIC FILMS; OZONE; SILICON COMPOUNDS; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ZINC OXIDE;

EID: 77955437142 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983249 Document Type: Conference Paper

Times cited : (8)

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