InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 525-528

  Teng, Teng ^a   Ai, Likun ^a   Xu, Anhuai ^a   Sun, Hao ^a   Zhu, Fuying ^a   Qi, Ming ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Double heterojunction bipolar transistor (DHBT); Gas source molecular beam epitaxy (GSMBE); Graded composition base; InGaAs; InP

Indexed keywords

BREAKDOWN VOLTAGE; CURRENT GAINS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER AREA; GRADED COMPOSITION; GRADED COMPOSITION BASE; HIGH QUALITY; INGAAS; INGAASP; INP; OFFSET VOLTAGE; STRUCTURAL MATERIALS;

EPITAXIAL GROWTH; GALLIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAMS; SEMICONDUCTING INDIUM; STRUCTURE (COMPOSITION);

GAS SOURCE MOLECULAR BEAM EPITAXY;

EID: 79958007426     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.080     Document Type: Article

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