High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 553-555

  Yang, Kyounghoon ^a   Munns, Gordon O ^a,b   Haddad, George I ^a  

^a University of Michigan   (United States)

^b EPI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

CARRIER BLOCKING EFFECT; CHIRPED SUPERLATTICE (CSL);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031274552     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641443     Document Type: Article

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