Solid source MBE growth on InP-based DHBTs for high-speed data communication

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 1001-1004

  Aidam, R ^a   Losch R ^a   Driad, R ^a   Schneider, K ^a   Makon, R ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

A3. Molecular beam epitaxy; B1. InP; B3. Bipolar transistors

Indexed keywords

CARRIER MOBILITY; CUTOFF FREQUENCY; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DC CURRENT GAIN; DOPING LEVELS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR (DHBT) TECHNOLOGY; HIGH SPEED DATA COMMUNICATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33947325510     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.243     Document Type: Article

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