InP DHBT-based 1:2 DEMUX IC operating at up to 120Gbit/s

Electronics Letters

Volumn 45, Issue 25, 2009, Pages 1340-1342

  Makon, R E ^a   Driad, R ^a   Losch R ^a   Rosenzweig, J ^a   Schlechtweg, M ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA INPUT; DATA RATES; DEMULTIPLEXERS; DHBT TECHNOLOGY; HIGH-SPEED; INP-DHBT; INP/INGAAS; OUTPUT DATA; VOLTAGE SWINGS;

EID: 72249094645     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.2459     Document Type: Article

References (5)

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2. Jansen, S.L., Derksen, R.H., Schubert, C., Zhou, X., Birk, M., Weiske, C.-J., Bohn, M., Van den Borne, D., Krummrich, P.M., Möller, M., Horst, F., Offrein, B.J., De Waardt, H., Khoe, G.D., and Kirstädter, A.: ' 107-Gb/s full-ETDM transmission over field installed fiber using vestigial sideband modulation ', Proc. Optical Fiber Communication, San Diego, CA, USA, March, 2007, p. 1-3
3. Suzuki, Y., Mamada, M., and Yamazaki, Z.: ' Over-100-Gb/s 1:2 demultiplexer based on InP HBT technology ', IEEE J. Solid-State Circuits, 2007, 42, (11), p. 2594-2599 0018-9200
4. Driad, R., Makon, R.E., Hurm, V., Benkhelifa, F., Lösch, R., Rosenzweig, J., and Schlechtweg, M.: ' InP-based DHBT technology for high-speed mixed signal and digital applications ', Int. Conf. on Indium Phosphide and Related Materials, Newport Beach, CA, USA, May, 2009, p. 10-15
5. Makon, R.E., Driad, R., Lösch, R., Rosenzweig, J., and Schlechtweg, M.: ' 100Gbit/s fully integrated InP DHBT-based CDR/1:2 DEMUX IC ', Proc. IEEE Compound Semiconductor Integrated Circuits Symp, Monterey, CA, USA, October, 2008, p. 1-4