Investigation of 3C-SiC lateral growth on 4H-SiC mesas

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 111-114

  Lorenzzi, Jean ^a   Jegenyes, Nikoletta ^a   Lazar, Mihai ^b   Tournier, Dominique ^b   Cauwet, François ^a   Carole, Davy ^a   Ferro, Gabriel ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b Univ Claude Bernard Lyon1   (France)

Author keywords

3C SiC; CVD; Lateral growth; Mesas; VLS mechanism

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SURFACE MORPHOLOGY;

3C-SIC; CHEMICAL VAPOUR DEPOSITION; DEPOSITION TECHNIQUE; LATERAL GROWTH; MESAS; MORPHOLOGY EVOLUTION; VAPOUR-LIQUID-SOLID MECHANISMS; VLS MECHANISM;

SILICON CARBIDE;

EID: 79955110222     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.111     Document Type: Conference Paper

References (3)

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