Growth of SiC from a liquid phase at low temperature

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 41-46

  Ferro, G ^a   Soueidan, M ^a   Kim Hak, O ^a   Cauwet, F ^a   Monteil, Y ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

3C SiC; Dipping; DPB; Epitaxy; Liquid phase; Low temperature; VLS

Indexed keywords

EPITAXIAL GROWTH; LIQUIDS; TEMPERATURE;

3C-SIC; APPROPRIATE TECHNIQUES; DIPPING; GROWTH TECHNIQUES; HETEROEPITAXIAL LAYERS; LIQUID PHASE; LOW TEMPERATURES; SELECTIVE EPITAXY;

SILICON CARBIDE;

EID: 38449122764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.41     Document Type: Conference Paper

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