Improved mesa designs for the growth of thin 4H-SiC homoepitaxial cantilevers

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 117-120

  Trunek, Andrew J ^a   Neudeck, Philip G ^a   Spry, David J ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Cantilever; Dislocations; Etch pits; Homoepitaxial; KOH etching; Mesa; On axis; Web growth

Indexed keywords

COALESCENCE; DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; EXPANSION; GEOMETRY; NANOCANTILEVERS; POTASSIUM HYDROXIDE;

CANTILEVER; ETCH PITS; HOMOEPITAXIAL; KOH ETCHING; MESA; ON-AXIS;

SILICON CARBIDE;

EID: 38449085770     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.117     Document Type: Conference Paper

References (4)

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2. P. G. Neudeck, J. A. Powell, A. Trunek, D. Spry, G. M. Beheim, E. Benavage, P. Abel, W. M. Vetter and M. Dudley: Mater. Sci. Forum Vol. 389-393 (2002), p.251
3. P. G. Neudeck and J. A. Powell: Recent Major Advances in SiC, edited by W. J. Choyke, H. Matsunami, and G. Pensl: Springer-Verlag Publishers (2003), p.179
4. P. G. Neudeck, D. J. Spry, A. J. Trunek, J. A. Powell, and G. M. Beheim: Silicon Carbide 2002--Materials Processing and Devices Vol. 742 (2003), p.K5.2.1