Quantum dot lasers grown by gas source molecular-beam epitaxy

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 450-453

  Gong, Q ^a   Chen, P ^a   Li, S G ^a   Lao, Y F ^a   Cao, C F ^a   Xu, C F ^a   Zhang, Y G ^a   Feng, S L ^a   Ma, C H ^b   Wang, H L ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

GaAs; Gas source molecular beam epitaxy; InAs; InP; Quantum dot lasers; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE OPERATION; EXTERNAL CAVITY LASERS; GAAS; INAS; INAS QUANTUM DOTS; INAS/GAAS; INAS/INP; INP; INP SUBSTRATES; LASING WAVELENGTH; LAYER THICKNESS; MATERIAL SYSTEMS; MAXIMUM OUTPUT POWER; OPTICAL POWER; QUANTUM DOTS; ROOM TEMPERATURE; WAVELENGTH REGIONS;

CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAMS; MONOLAYERS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 79957974374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.014     Document Type: Article

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