Growth of InAs/InP-based quantum dots for 1.55 μm laser applications

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1482-1486

  Poole, P J ^a   Kaminska, K ^a   Barrios, P ^a   Lu, Z ^a   Liu, J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A1. Nanostructures; A3. Chemical beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CRYSTAL GROWTH; DIODES; EPITAXIAL GROWTH; INDIUM ARSENIDE; LASER APPLICATIONS; LASERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

A1. NANOSTRUCTURES; A3. CHEMICAL BEAM EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; B3. LASER DIODES; CONTINUOUS-WAVE OPERATIONS; DOT DENSITIES; DOT STRUCTURES; EMISSION ENERGIES; FULL WIDTH HALF MAXIMUMS; HIGH DOT DENSITIES; INAS QUANTUM DOTS; INAS/INP; INGAASP; INP SUBSTRATES; MULTIPLE LAYERS; PHOTOLUMINESCENCE EMISSIONS; QUANTUM DOTS; ROOM TEMPERATURES; SINGLE LATERAL MODES; SLOPE EFFICIENCIES; WAVELENGTH RANGES;

CHEMICAL BEAM EPITAXY;

EID: 62549107060     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.129     Document Type: Article

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