Room temperature continuous-wave operation of InAsInP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Li, S G ^a   Gong, Q ^a   Lao, Y F ^a   He, K ^a   Li, J ^a   Zhang, Y G ^a   Feng, S L ^a   Wang, H L ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM ARSENIDE; LASERS; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD CURRENT DENSITY; WAVEGUIDES;

ACTIVE REGION; CHARACTERISTIC TEMPERATURES; CONTINUOUS WAVE MODES; CONTINUOUS-WAVE OPERATION; INAS QUANTUM DOTS; INGAASP; INTERNAL QUANTUM EFFICIENCY; LASER STRUCTURING; QD LAYERS; QUANTUM DOT LASERS; RIDGE-WAVEGUIDE LASERS; ROOM TEMPERATURES; STACKED INAS; WAVELENGTH REGIONS;

MOLECULAR BEAM EPITAXY;

EID: 52349121747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2985900     Document Type: Article

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