Contact characterizations of ZrN thin films obtained by reactive sputtering

Physica B: Condensed Matter

Volumn 393, Issue 1-2, 2007, Pages 292-297

  Pelleg, J ^a   Bibi, A ^a   Sinder, M ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Schottky barrier; ZrN p type Si(1 0 0)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MAGNETRON SPUTTERING; REACTIVE SPUTTERING; SCHOTTKY BARRIER DIODES; TITANIUM NITRIDE; ZIRCONIUM COMPOUNDS;

MAGNETRON REACTIVE SPUTTERING; SCHOTTKY BARRIER;

THIN FILMS;

EID: 34047106914     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.01.024     Document Type: Article

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