Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1768-1772

  Martineau, D ^a   Mazeaud, T ^b   Legros, M ^a   Dupuy, Ph ^b   Levade, C ^a,c  

^a CEMES CNRS   (France)

^b Freescale Semiconductors   (France)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE TRANSISTORS; AUTOMOTIVE APPLICATIONS; FAILURE MECHANISM; HOT SPOT; INTERGRANULAR; INTERGRANULAR CRACK; LIFE-TIMES; MELT-DOWN; METAL GRAINS; METALLIC LAYERS; METALLIZATIONS; POWER MOSFET; POWER MOSFET DEVICES; SI SUBSTRATES; SOURCE RESISTANCE; THERMAL FATIGUE TESTS;

CRACKS; DEGRADATION; FATIGUE TESTING; TEXTURES; THERMAL FATIGUE;

MOSFET DEVICES;

EID: 79957901263     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.065     Document Type: Conference Paper

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