Alterations induced in the structure of intelligent power devices by extreme electro-thermal fatigue

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 2997-3001

  Khong, B ^a,b   Legros, M ^a   Dupuy, P ^b   Levade, C ^a,c   Vanderschaeve, G ^a,c  

^a CEMES CNRS   (France)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AL-METALLIZATION; DIE ATTACH; EXTENDED DEFECTS; FREESCALE SEMICONDUCTOR; GRAIN SIZES; INTELLIGENT POWER DEVICES; INTERGRANULAR; INTERNATIONAL CONFERENCES; METALLIZATION; MICROSTRUCTURAL ANALYSIS; NON-DESTRUCTIVE TECHNIQUES; POWER DEVICES; SI SUBSTRATE;

ALUMINUM; CRYSTALS; ELECTRIC EQUIPMENT; EPITAXIAL GROWTH; EXPLOSIVE ACTUATED DEVICES; GRAIN SIZE AND SHAPE; HEAT STORAGE; METALLIZING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON;

ELECTRIC CONDUCTIVITY;

EID: 49549113835     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675492     Document Type: Conference Paper

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