Reliability study of power RF LDMOS device under thermal stress

Microelectronics Journal

Volumn 38, Issue 2 SPEC. ISS., 2007, Pages 164-170

  Belaid M A ^a   Ketata, K ^a   Mourgues, K ^a   Gares, M ^a   Masmoudi, M ^a   Marcon, J ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

Hot carrier effects; LDMOS; Simulation; Thermal stress

Indexed keywords

AGING OF MATERIALS; CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; DEGRADATION; HOT CARRIERS; MATHEMATICAL MODELS; THERMAL CYCLING; THERMAL STRESS;

CARRIER INJECTION; FEEDBACK CAPACITANCE; THERMAL SHOCK TESTS (TST);

MOS DEVICES;

EID: 33846611982     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.08.004     Document Type: Article

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