Source electrode evolution of a low voltage power MOSFET under avalanche cycling

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1341-1345

  Bernoux, B ^a,b,c   Escoffier, R ^c   Jalbaud, P ^c   Dorkel, J M ^a,b  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c Freescale Semiconducteurs France SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PARAMETER; HIGH CURRENTS; HIGH TEMPERATURE; LOW VOLTAGES; MOS-FET; ON-RESISTANCE; POWER MOSFET; SIMPLE MODEL;

ELECTRIC POTENTIAL;

MOSFET DEVICES;

EID: 69349102404     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.06.035     Document Type: Article

References (6)

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3. Santoro C. Thermal cycling and surface reconstruction in aluminum thin films. J Electrotherm Soc 1 (1969)
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