In-line characterization of heterojunction bipolar transistor base layers by high-Resolution X-Ray diffraction

ECS Transactions

Volumn 10, Issue 1, 2007, Pages 151-160

  Nguyen, N D ^a   Loo, R ^a   Hikavyy, A ^a   Van Daele, B ^a   Ryan, P ^b   Wormington, M ^b   Hopkins, J ^b  

^a IMEC   (Belgium)

^b Bede plc   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LOSSES; GERMANIUM METALLOGRAPHY; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM; SILICON WAFERS; TRANSISTORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

BORON CONCENTRATIONS; DETECTION LIMITS; DOPANT CONCENTRATIONS; HIGH-RESOLUTION X-RAY DIFFRACTION; IN-LINE MEASUREMENTS; LAYER PARAMETERS; PATTERNED WAFERS; POLYCRYSTALLINE-SI;

SI-GE ALLOYS;

EID: 55649105176     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2773985     Document Type: Conference Paper

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