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Volumn 145-146, Issue , 2009, Pages 177-180

Low temperature pre-epi treatment: Critical parameters to control interface contamination

Author keywords

Embedded SiGe; Epitaxial growth; HBT; Low thermal budget; Si SiGe

Indexed keywords

BUDGET CONTROL; CONTAMINATION; DEFECTS; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; TEMPERATURE;

EID: 73649101723     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.145-146.177     Document Type: Conference Paper
Times cited : (27)

References (15)
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    • E. Simoen et al., to be presented at 214th ECS Meeting, October 12-17, 2008 (session E15-23: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 3), accepted for publication in the proceedings
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.