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Volumn 519, Issue 15, 2011, Pages 5066-5069

Growth of nonpolar m-plane GaN epitaxial film on a lattice-matched (100) β-LiGaO2 substrate by chemical vapor deposition

(4) Chou, Mitch M C a Chen, Chenlong a Hang, D R a Yang, Wen Ting a

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

Atomic force microscopy; CVD; M plane GaN; Photoluminescence; X ray diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; CVD; CVD METHOD; EPITAXIAL RELATIONSHIPS; GAN EPITAXIAL FILMS; GAN FILM; GROWTH CONDITIONS; LATTICE-MATCHED; M-PLANE; NEAR BAND EDGE EMISSIONS; NON-POLAR GAN; NONPOLAR M-PLANE; PHOTOLUMINESCENCE MEASUREMENTS; PL SPECTRA; ROOM TEMPERATURE; SCANNING ELECTRONS; TEM; YELLOW LUMINESCENCE BANDS;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; FILM PREPARATION; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CHEMICAL VAPOR DEPOSITION;

EID: 79957663057 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.01.129 Document Type: Conference Paper

Times cited : (22)

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