Uniform high-current cathodes using massive arrays of Si field emitters individually controlled by vertical Si ungated FETs-Part 1: Device design and simulation

IEEE Transactions on Electron Devices

Volumn 58, Issue 6, 2011, Pages 1775-1782

  Velásquez García, Luis Fernando ^a   Guerrera, Stephen A ^b   Niu, Ying ^c   Akinwande, Akintunde Ibitayo ^d  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b USA   (United States)

^c Raytheon   (United States)

^d DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

Author keywords

Ballasting; cathodes; electron supply control; Si field emission arrays (FEAs); vertical ungated Si field effect transistors (FETs)

Indexed keywords

BALLASTING; CURRENT SOURCES; DESIGN AND SIMULATION; DEVICE DESIGN; DOPING CONCENTRATION; FIELD EMITTER; HIGH ASPECT RATIO; HIGH CURRENTS; HIGH-CURRENT; MASSIVE ARRAYS; SI FIELD EMISSION ARRAYS (FEAS); TWO-TERMINAL DEVICES; VELOCITY SATURATION; VERTICAL UNGATED SI FIELD-EFFECT TRANSISTORS (FETS);

ASPECT RATIO; ELECTRODES; FIELD EMISSION; FIELD EMISSION DISPLAYS; MESFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; TRANSISTORS;

FIELD EMISSION CATHODES;

EID: 79957645782     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2128322     Document Type: Article

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