Uniform high current field emission of electrons from Si and CNF FEAs individually controlled by Si pillar ungated FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 599-602

  Velasquez Garcia L F ^a   Adeoti, B ^a   Niu, Y ^a   Akinwande, A I ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FIELD EMISSION; SILICON;

HIGH CURRENT FIELD EMISSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50249132497     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419010     Document Type: Conference Paper

References (5)

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3. H. Takemura, Y. Tomihari, N. Furutake, F. Matsuno, M. Yoshiki, N. Takada, A. Okamoto, and S. Miyano, "A novel vertical current limiter fabricated with a Deep-trench-forming technology for highly reliable field emitter arrays", Technical Digest of the IEEE International Electron Device Meeting, Dec. 1997, pp. 709-712.
4. C.-Y. Hong and A. I. Akinwande, "Temporal and spatial current stability of smart field emission arrays", IEEE Transactions on Electron Devices, Vol. 52, No. 10, Oct. 2005 pp. 2323-2328.
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