Electrical properties and surface morphology of heteroepitaxial-grown tin-doped indium oxide thin films deposited by molecular-beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 II, 2000, Pages 1663-1667

  Taga, Naoaki ^a   Shigesato, Yuzo ^b   Kamei, Masayuki ^c  

^a ASAHI GLASS CO LTD   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; TIN; ZIRCONIA;

INDIUM OXIDE;

SEMICONDUCTING FILMS;

EID: 0034226688     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582403     Document Type: Article

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