The chemistry of gate dielectric breakdown

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Li, X ^a   Tung, C H ^b   Pey, K L ^a   Lo, V L ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; CHEMICAL NATURES; DIGITAL TO ANALOGS; GATE DIELECTRIC BREAKDOWNS; GATE-LEAKAGE CURRENTS; HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPIES; OXYGEN DEFICIENCIES; PERCOLATION PATHS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; ULTRATHIN SION;

ELECTRON DEVICES; ELECTRONS; ENERGY DISSIPATION; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE (FLUID); LEAKAGE CURRENTS; OXYGEN; PERCOLATION (FLUIDS); SILICON COMPOUNDS; SOLVENTS; THERMAL NOISE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 64549083595     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796813     Document Type: Conference Paper

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