Design implications of memristor-based RRAM cross-point structures

Proceedings -Design, Automation and Test in Europe, DATE

Volumn , Issue , 2011, Pages 734-739

  Xu, Cong ^a   Dong, Xiangyu ^a,b   Jouppi, Norman P ^b   Xie, Yuan ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS DEVICES; ARRAY DESIGN; CELL STRUCTURE; DESIGN IMPLICATIONS; EMERGING NON-VOLATILE MEMORIES; MAGNETIC MEMORIES; MEMORY CELL; MEMORY HIERARCHY; PERIPHERAL CIRCUITRY; PHASE CHANGES; RANDOM ACCESS MEMORIES; SYSTEM-LEVEL MODELS; ULTRAHIGH DENSITY;

MAGNETIC STORAGE; MEMORY ARCHITECTURE; MEMRISTORS; MOS DEVICES; MRAM DEVICES; PASSIVE FILTERS; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; RESISTORS;

STRUCTURAL DESIGN;

EID: 79957568212     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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