Negative differential resistance in isolated GaN nanowires with focused electron beam deposited platinum contacts

Micro and Nano Letters

Volumn 6, Issue 4, 2011, Pages 280-283

  Dhabal, A ^a   Chander, D S ^a   Ramkumar, J ^a   Dhamodaran, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DEFECT STATE; ELECTRICAL PROPERTY; FOCUSED ELECTRON BEAMS; FORWARD BIAS; GAN NANOWIRES; NEGATIVE DIFFERENTIAL RESISTANCES; OHMIC BEHAVIOUR; PEAK TO VALLEY CURRENT RATIO; REVERSE BIAS; ROOM TEMPERATURE; ZIG-ZAG;

ELECTRIC PROPERTIES; ELECTRON BEAMS; GALLIUM NITRIDE; NANOWIRES; NEGATIVE RESISTANCE; PLATINUM;

ELECTRIC WIRE;

NANOWIRE; PLATINUM;

ARTICLE; ELECTRON BEAM; ELECTRON DIFFRACTION; HIGH TEMPERATURE; NEGATIVE DIFFERENTIAL RESISTANCE; NONHUMAN; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; TERAHERTZ SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 79957496617     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2011.0043     Document Type: Article

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