A planar Gunn diode operating above 100 GHz

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 849-851

  Khalid, A ^a   Pilgrim, N J ^b   Dunn, G M ^b   Holland, M C ^a   Stanley, C R ^a   Thayne, I G ^a   Cumming, D R S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF ABERDEEN   (United Kingdom)

Author keywords

Gunn devices; Semiconductor device fabrication; Submillimeter wave diodes; Terahertz

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MILLIMETER WAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBMILLIMETER WAVES;

SUBMILLIMETER WAVE DIODES; TERAHERTZ;

GUNN DIODES;

EID: 34948909562     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.904218     Document Type: Article

References (14)

1. T. W. Crowe, D. W. Porterfield, J. L. Hesler, W. L. Bishop, D. S. Kurtz, and K. Hui, "Terahertz sources and detectors," in Proc. SPIE Terahertz Mil. Security Appl. III, R. J. Hwu, D. L. Woolard, and M. J. Rosker, Eds., 2005, vol. 5790, pp. 271-280.
2. P. H. Siegel, "Terahertz technology," IEEE Trans. Microw. Theory Tech., vol. 50, no. 3, pp. 910-928, Mar. 2002.
3. C. Walther, G. Scalari, J. Faist, H. Beere, and D. Ritchie, "Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz," Appl. Phys. Lett., vol. 89, no. 23, pp. 231 121-231 123, Dec. 2006.
4. J. B. Gunn, "Microwave oscillations of current in III-V semiconductors," Solid State Commun., vol. 1, no. 4, pp. 88-91, Sep. 1963.
5. S. J. J. Teng and R. E. Goldwasser, "High-performance second-harmonics operation w-band GaAs Gunn diode," IEEE Electron Device Lett., vol. 10, no. 9, pp. 412-414, Sep. 1989.
6. H. Eisele and R. Kamoua, "Submillimeter-wave InP Gunn devices," IEEE Trans. Microw. Theory Tech., vol. 52, no. 10, pp. 2371-2378, Oct. 2004.
7. L. Varani, C. Palermo, J. F. Millithalar, J. C. Vaissiere, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Perez, D. Pardo, and T. Gonzalez, "Numerical modelling of terahetz electronic devices," J. Comput. Electron., vol. 5, no. 2/3, pp. 71-77, 2006.
8. L. Springer, C. G. Diskus, K. Lubke, A. Stelzer, and H. W. Thim, "Transferred electron effect in AlGaAs/GaAs multi-quantum-well structures," in Proc. 27th Eur. Solid-State Device Res. Conf., Sep. 22-24, 1997, pp. 296-299.
9. G. M. Dunn, A. Phillips, and P. J. Topham, "Gunn instabilities in power HEMTs," Electron. Lett., vol. 37, no. 8, pp. 530-531, Apr. 2001.
10. X. Hue, B. Boudart, and Y. Crosnier, "Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 16, no. 5, pp. 2675-2679, Sep./Oct. 1998.
11. J.-W. Lim, J.-K. Mun, M.-H. Kwak, and J.-J. Lee, "Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors," Solid State Electron., vol. 43, no. 10, pp. 1893-1900, Oct. 1999.
12. 2O/buffered oxide etch," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 16, no. 2, pp. 560-588, Mar. 1998.
13. D. L. Edgar, Z. Borsosfoldi, K. Elgaid, T. Lodhi, I. G. Thayne, A. K. Jastrzebski, D. R. Webster, and D. G. Haigh, "Millimetre wave MMICs in coplanar waveguide," in Proc. IEE Tutorial Colloq. Des. RFICs MMICs 1999, pp. 6/1-6/9. Ref. No. 1999/158.
14. Aberdeen University and University Court of The University of Glasgow, Semiconductor Device for Generating an Oscillating Voltage, p. 2727. Patents and Designs Journal No. 6107, GB0608515.3.