Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

Chinese Physics B

Volumn 20, Issue 5, 2011, Pages

  Zhang, An ^a   Zhao, Xiao Ru ^a   Duan, Li Bing ^a   Liu, Jin Ming ^a   Zhao, Jian Lin ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

grain boundary; simulation; trap states; ZnO thin film transistors

Indexed keywords

BOUNDARY POSITIONS; CARRIER TRANSPORTATION; DEEP LEVEL; MOBILITY VARIATION; NUMERICAL STUDIES; OUTPUT CHARACTERISTICS; POLY-SI; POLYCRYSTALLINE-SI; SIMULATION; TRANSISTOR CHARACTERISTICS; TRAP STATES; TWO-DIMENSIONAL NUMERICAL SIMULATION; ZNO; ZNO THIN FILM;

CARRIER CONCENTRATION; CARRIER MOBILITY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALLIC FILMS; OPTICAL FILMS; POLYSILICON; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79957490818     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/5/057201     Document Type: Article

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